Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax
نویسندگان
چکیده
منابع مشابه
Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax
In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solve...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep35717